Savannah
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Service & reparation Request a quoteSavannah® has become the preferred system for university researchers worldwide engaged in ALD and looking for an affordable yet robust platform. We have delivered hundreds of these systems in the past decade. Savannah®’s efficient use of precursors and power-saving features substantially reduces the cost of operating a thin film deposition system.
Key features include:
- In-Situ Ellipsometry
- In-Situ QCM
- Self Assembling Monolayers
- 2-Second Cycle Times
- Integrated Ozone
- Low Vapor Pressure Deposition
- Batch Processing
- Glove Box Integration
Savannah® is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode™ for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. Savannah® is available in three configurations: S100, S200, and S300. Savannah® is capable of holding substrates of different sizes (up to 300mm for the S300). The Savannah® thin film deposition systems are equipped with heated precursors lines and the option to add up to six lines. Savannah® is capable of handling gas, liquid, or solid precursors.
Contact
Chris Bradburn
- Sales - Materials Analysis
- Phone: +46 (0)18-56 68 09
- Mobile: +46 (0)70-396 18 88
- chris.bradburn@gammadata.se
Technical specification
Savannah® G2 Technical specifications
Substrate Size | Savannah S100: up to 100 mm Savannah® S200: up to 200 mm Savannah® S300: up to 300 mm |
Dimensions (w x d x h) | Savannah S100: 585 x 560 x 980 mm Savannah® S200: 585 x 560 x 980 mm Savannah® S300: 686 x 560 x 980 mm |
Cabinet | Steel with white powder coat paint with removable panels and lockable precursor door |
Operational Modes | Continuous Mode™ (high speed) or Exposure Mode™ (ultra-high aspect ratio) |
Power | 115 VAC or 220 VAC,1500 W (excluding pump) |
Controls | LabVIEW™, Windows™ 7, Lenovo Laptop, USB control |
Maximum Substrate Temperature | S100: RT – 400 °C S200: RT – 350 °C S300: RT – 350 °C |
Deposition Uniformity | (Al2O3) <1% (1σ) |
Cycle Time | <2 seconds per cycle with Al2O3 at 200 °C |
Vacuum Pump | Alcatel 2021C2 – 14.6 CFM |
Compatibility | Clean room class 100 compatible |
Compliance | CE, TUV, FCC |
Precursor Delivery System, Ports | 2 lines standard, up to 6 lines available Each line accommodates solid, liquid and gas precursors Lines can be independently heated up to 200 °C |
Precursor Delivery System, Valves | Industry standard high speed ALD valves with 10 msec response time |
Precursor Cylinders | Individually heated 50 ml stainless steel cylinders, optional larger cylinders available |
Carrier/Venting Gas | N2 mass flow controlled, 100 SCCM |
Options | Low Vapor Pressure Delivery (LVPD) System Ozone Generator Dome lid for wafer cassette or 3D objects Glove box Interface In-Situ Ellipsometry In-Situ Quartz Crystal MicroBalance (QCM) Self Assembling Monolayers (SAMs) Particle Coating |