TFLFA – Thin film thermal conductivity
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Service & reparation Request a quoteThermophysical properties from thin-films are becoming more and more important in industries such as, phase-change optical disk media, thermo-electric materials, light emitting diodes (LEDs), phase change memories, flat panel displays, and the semiconductor industry. All these industries deposit a film on a substrate in order to give a device a particular function. Since the physical properties of these films differ from bulk material, these data are required for accurate thermal management predictions.
Based on the well established Laser Flash technique, the Linseis Laserflash for thin films (TFA) now offers a whole range of new possibilities to analyze thermophysical properties of thin films from 80nm up to 20 μm thickness. Two methods are now available:
- High Speed Laserflash Method (Rear heating Front detection (RF))
- Time Domain Thermoreflectance Method (Front heating Front detection (FF))
Contact
Chris Bradburn
- Sales - Materials Analysis
- Phone: +46 (0)18-56 68 09
- Mobile: +46 (0)70-396 18 88
- chris.bradburn@gammadata.se
Technical specification
| Temperature range*: | RT |
| RT up to 500°C | |
| -100°C up to 500°C | |
| Pump-Laser: | Nd:YAG Laser, maximum Impuls surrent: |
| 90mJ/Impuls (software controled), Pulswidth: 8 ns | |
| Probe-Laser: | HeNe-Laser (632nm), 2mW |
| Frontside-Thermoreflexion: | Si-PIN-Photodiode, active diameter: 0.8 mm, |
| bandwidth DC … 400MHz, risetime: 1ns | |
| Rearside-Thermoreflexion: | quadrant diode, active diameter: 1.1 mm |
| bandwidth DC … 100MHz, risetime: 3.5ns | |
| Measuring range: | 0,01 mm2/s up to 1000 mm2/s |
| Sample diameter: | round samples ∅ 10…20 mm |
| Sample thickness: | 80 nm up to 20 µm |
| Number of samples: | Sample robot for up to 6 samples |
| Atmospheres: | inert, oxidizing, reducing |
| Vacuum: | up to 10E-4mbar |